BEHAVIOR OF AMORPHOUS-GE CONTACTS TO MONOCRYSTALLINE SILICON

[1] DOHLER GH, 1974, 20 AIP C P, P351

[2] NEW TYPE OF NON-INJECTING BACT CONTACT FOR TOTALLY DEPLETED SILICON SURFACE BARRIER DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 96 (01): : 81 - &

[3] GOETZBERGER A, 1969, APPLIED SOLID STATE, V1, P174

[4] OHMIC CONTACTS ON SEMICONDUCTORS USING INDIUM AMALGAM [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) : 185 - +

[5] TRANSIENT HIGH-LEVEL MAJORITY AND MINORITY-CARRIER PHOTOCURRENTS IN P-TYPE SILICON SCHOTTKY-BARRIER DIODES .1. COMPARISON WITH ANALYTIC THEORY [J]. SOLID-STATE ELECTRONICS, 1976, 19 (07) : 653 - 655

[6] PULFREY DL, 1976, IEEE T ELECTR DE JUN, P588

[7] RHODERICK EH, 1974, METAL SEMICONDUCTOR, P17

[8] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1209 - &

[9] SZE SM, 1969, PHYSICS SEMICONDUCTO, P421

[10] ROLE OF CONTACTS TO NUCLEAR RADIATION DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 133 (03): : 445 - 452

[1] DOHLER GH, 1974, 20 AIP C P, P351

[2] NEW TYPE OF NON-INJECTING BACT CONTACT FOR TOTALLY DEPLETED SILICON SURFACE BARRIER DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 96 (01): : 81 - &

[3] GOETZBERGER A, 1969, APPLIED SOLID STATE, V1, P174

[4] OHMIC CONTACTS ON SEMICONDUCTORS USING INDIUM AMALGAM [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) : 185 - +

[5] TRANSIENT HIGH-LEVEL MAJORITY AND MINORITY-CARRIER PHOTOCURRENTS IN P-TYPE SILICON SCHOTTKY-BARRIER DIODES .1. COMPARISON WITH ANALYTIC THEORY [J]. SOLID-STATE ELECTRONICS, 1976, 19 (07) : 653 - 655

[6] PULFREY DL, 1976, IEEE T ELECTR DE JUN, P588

[7] RHODERICK EH, 1974, METAL SEMICONDUCTOR, P17

[8] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1209 - &

[9] SZE SM, 1969, PHYSICS SEMICONDUCTO, P421

[10] ROLE OF CONTACTS TO NUCLEAR RADIATION DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 133 (03): : 445 - 452