HIGH ELECTRON-MOBILITY IN THE SELECTIVELY DOPED HETEROSTRUCTURES GROWN BY NORMAL PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：7

作者：

MORI, Y

NAKAMURA, F

WATANABE, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337648

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：334 / 337

页数：4

共 13 条

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[6] OPTICAL-PROPERTIES OF (AIAS)N(GAAS)N SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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KOBAYASHI N, 1984, ELECTRON LETT, V20, P887, DOI 10.1049/el:19840602

[8]

MORI Y, 1982, I PHYS C SER, V63, P95

[9]

MORI Y, 1982, J PHYS PARIS, V12, P271

[10] INCREASE IN LUMINESCENCE EFFICIENCY OF ALXGA1-XAS GROWN BY ORGANOMETALLIC VPE [J].

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