GROWTH OF (AL,GA)AS/GAAS HETEROSTRUCTURES FOR HEMT DEVICES

[1] ANDRE JP, 1983, I PHYS C SER, V65, P117

[2] CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS - EFFECT OF DONOR-ELECTRON SEPARATION [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 262 - 264

[3] MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L574 - L576

[4] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611

[5] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L317 - L319

[6] ELECTRON MOBILITIES IN MODULATION-DOPED GAAS-(ALGA)AS HETEROSTRUCTURES [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 519 - 526

[1] ANDRE JP, 1983, I PHYS C SER, V65, P117

[2] CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS - EFFECT OF DONOR-ELECTRON SEPARATION [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 262 - 264

[3] MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L574 - L576

[4] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611

[5] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L317 - L319

[6] ELECTRON MOBILITIES IN MODULATION-DOPED GAAS-(ALGA)AS HETEROSTRUCTURES [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 519 - 526