A MESFET DISTRIBUTED AMPLIFIER WITH 2 GHZ BANDWIDTH

被引：30

作者：

JUTZI, W

机构：

[1] IBM Zurich Research Lab., Rüschlikon

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 06期

关键词：

D O I：

10.1109/PROC.1969.7188

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A lumped distributed amplifier is built in a hybrid technique with microwave Schottky-barrier field-effect transistors and tested. A not yet optimized structure has a flat frequency response up to about 2 GHz and negligible phase distortions; ps-pulses are amplified with negligible overshoot. Copyright © 1969 by The Inshtute of Electrical and Electronics Engineers Inc.

引用

页码：1195 / &

共 7 条

[1] MICROWAVE SILICON SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR
DRANGEID, KE
JAGGI, R
MIDDLEHO.S
MOHR, T
MOSER, A
SASSO, G
SOMMERHALDER, R
WOLF, P
[J]. ELECTRONICS LETTERS, 1968, 4 (17) : 362 - +
[2] DRANGEID KE, 1969, MAR EUR M SEM COND D
[3] JUTZI W, 1969, ARCH ELEKTR UBERTRAG, V23, P1
[4] jutzi W., 1968, P IEEE, P66
[5] DISTRIBUTED FIELD-EFFECT AMPLIFIERS
KOHN, G
LANDAUER, RW
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (06): : 1136 - &
[6] A TRAVELING-WAVE TRANSISTOR
MCIVER, GW
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (11): : 1747 - &
[7] MOSER A, 1967, INT ELEK RUNDSCHAU, V5, P109

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