STUDIES OF ALUMINUM SCHOTTKY-BARRIER GATE ANNEALING ON GAAS FET STRUCTURES

被引：14

作者：

SLEGER, K

CHRISTOU, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 04期

关键词：

D O I：

10.1016/0038-1101(78)90336-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：677 / 684

页数：8

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[10] THERMAL AGING OF AL THIN-FILMS ON GAAS [J].

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