INJECTION LASER WRITING ON CHALCOGENIDE FILMS

被引：71

作者：

SMITH, AW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED OPTICS | 1974年 / 13卷 / 04期

关键词：

D O I：

10.1364/AO.13.000795

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：795 / 798

页数：4

共 13 条

[1]

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[8] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J].

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[9] HIGH PEAK POWER FROM (GAAL)AS-GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

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APPLIED PHYSICS LETTERS, 1973, 22 (12) :638-640

[10] REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALX GA1-X AS HETEROSTRUCTURE LASERS BY SEPARATE OPTICAL AND CARRIER CONFINEMENT [J].

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APPLIED PHYSICS LETTERS, 1973, 22 (11) :590-591

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