HIGH-SPEED SINGLE-LAYER-RESIST PROCESS AND ENERGY-DEPENDENT ASPECT RATIOS FOR 0.2-MU-M ELECTRON-BEAM LITHOGRAPHY

被引：9

作者：

MURAI, F

YAMAMOTO, J

YAMAGUCHI, H

OKAZAKI, S

SATO, K

HASEGAWA, K

HAYAKAWA, H

机构：

[1] HITACHI LTD,CTR DEVICE DEV,OME,TOKYO 198,JAPAN

[2] HITACHI ULSI ENGN CORP,OME,TOKYO 198,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587566

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3874 / 3878

页数：5

共 13 条

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