INTERACTION OF LOW-ENERGY IMPLANTED ATOMIC H WITH SLOW AND FAST DIFFUSING METALLIC IMPURITIES IN SI

被引：35

作者：

SINGH, R

FONASH, SJ

ROHATGI, A

机构：

[1] PENN STATE UNIV,ENGN SCI PROGRAM,UNIVERSITY PK,PA 16802

[2] GEORGIA INST TECHNOL,DEPT ELECT ENGN,ATLANTA,GA 30300

来源：

关键词：

D O I：

10.1063/1.97551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：800 / 802

页数：3

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