THE ELECTRICAL-PROPERTIES OF DEEP COPPER-RELATED AND NICKEL-RELATED CENTERS IN SILICON

被引：79

作者：

PEARTON, SJ

TAVENDALE, AJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.332160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1375 / 1379

页数：5

共 24 条

[1]

BAKHADYRKHANOV MK, 1977, SOV PHYS SEMICOND+, V11, P1205

[2]

BAKHADYRKHANOV MK, 1976, SOV PHYS SEMICOND+, V10, P593

[3] MOBILITY OF RADIATION-INDUCED DEFECTS IN GERMANIUM [J].

BARUCH, P .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) :653-&

[4] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J].

BENTON, JL ;

DOHERTY, CJ ;

FERRIS, SD ;

FLAMM, DL ;

KIMERLING, LC ;

LEAMY, HJ .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :670-671

[5] ENERGY-LEVELS IN SILICON [J].

CHEN, JW ;

MILNES, AG .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 :157-228

[6] ROOM-TEMPERATURE INSTABILITY OF ELECTRON INDUCED DEFECTS IN N-TYPE SILICON CONTAINING GERMANIUM [J].

EVWARAYE, AO .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :769-770

[7] ELECTRON-IRRADIATION DAMAGE IN ANTIMONY-DOPED SILICON [J].

EVWARAYE, AO .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :734-738

[8] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[9] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP .2. CAPTURE CROSS-SECTIONS [J].

HENRY, CH ;

KUKIMOTO, H ;

MILLER, GL ;

MERRITT, FR .

PHYSICAL REVIEW B, 1973, 7 (06) :2499-2507

[10]

Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221

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