ELECTRON-IRRADIATION DAMAGE IN ANTIMONY-DOPED SILICON

被引：54

作者：

EVWARAYE, AO ^{[1
]}

机构：

[1] GE,RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.323663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：734 / 738

页数：5

共 22 条

[1] BOURGOIN JC, 1974, LATTICE DEFECTS SEMI, P149
[2] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY
CHENG, LJ
CORELLI, JC
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[3] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE AND ELECTRON-NUCLEAR DOUBLE RESONANCE OF ARSENIC- AND ANTIMONY-VACANCY PAIRS
ELKIN, EL
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[J]. PHYSICAL REVIEW, 1968, 174 (03): : 881 - &
[4] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON AS DETERMINED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
EVWARAYE, AO
SUN, E
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3172 - 3176
[5] ELECTRON-IRRADIATION-INDUCED DIVACANCY IN LIGHTLY DOPED SILICON
EVWARAYE, AO
SUN, E
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 3776 - 3780
[6] ROLE OF OXYGEN IN IRRADIATED ARSENIC-DOPED SILICON
EVWARAYE, AO
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 476 - 478
[7] EFFECT OF IMPURITIES ON ANNEALING BEHAVIOR OF IRRADIATED SILICON
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HIRATA, M
SAITO, H
CRAWFORD, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) : 2433 - &
[8] INTERACTIONS OF POINT DEFECTS WITH IMPURITIES IN SILICON
HIRATA, M
HIRATA, M
SAITO, H
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (02) : 405 - &
[9] RECOMBINATION CENTERS IN GAMMA-IRRADIATED SILICON
HIRATA, M
HIRATA, M
SAITO, H
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1867 - &
[10] ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON
KIMERLING, LC
DEANGELIS, HM
DIEBOLD, JW
[J]. SOLID STATE COMMUNICATIONS, 1975, 16 (01) : 171 - 174

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