ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON

被引：108

作者：

KIMERLING, LC

DEANGELIS, HM

DIEBOLD, JW

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] USAF,CAMBRIDGE RES LABS,BEDFORD,MA 01730

来源：

SOLID STATE COMMUNICATIONS | 1975年 / 16卷 / 01期

关键词：

D O I：

10.1016/0038-1098(75)90818-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：171 / 174

页数：4

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