MOBILITY OF RADIATION-INDUCED DEFECTS IN GERMANIUM

[1] BERNARD M, 1958, J ELECTRON CONTR, V5, P15

[2] ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1258 - 1268

[3] BROWN WL, PRIV COMMUNICATIONS

[4] CORBETT JW, NYP

[5] MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 21 - 24

[6] LEHOVEC CK, 1957, J APPL PHYS, V28, P420

[7] SELF-DIFFUSION IN GERMANIUM [J]. PHYSICAL REVIEW, 1956, 102 (03): : 636 - 639

[8] ION DRIFT IN AN N-P JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 291 - 302

[9] PFISTER JC, ERD

[10] PFISTER JC, 1960, U

[1] BERNARD M, 1958, J ELECTRON CONTR, V5, P15

[2] ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1258 - 1268

[3] BROWN WL, PRIV COMMUNICATIONS

[4] CORBETT JW, NYP

[5] MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 21 - 24

[6] LEHOVEC CK, 1957, J APPL PHYS, V28, P420

[7] SELF-DIFFUSION IN GERMANIUM [J]. PHYSICAL REVIEW, 1956, 102 (03): : 636 - 639

[8] ION DRIFT IN AN N-P JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 291 - 302

[9] PFISTER JC, ERD

[10] PFISTER JC, 1960, U