DISLOCATION GLIDE MOTION IN 6H SIC SINGLE-CRYSTALS SUBJECTED TO HIGH-TEMPERATURE DEFORMATION

被引：99

作者：

FUJITA, S

MAEDA, K

HYODO, S

机构：

[1] Univ of Tokyo, Tokyo, Jpn, Univ of Tokyo, Tokyo, Jpn

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1987年 / 55卷 / 02期

关键词：

ACKNOWLEDGMENTS The authors would like to thank Professor S. Takeuchi for his permission to use high-temperature compression facilities and for his valuable comments. They are indebted to T. Hashimoto for his help in compression tests. Taiheiyo Rundum Corporation is also acknowledged for supplying the Sic single crystals. One of the authors (K. M.) is grateful to the Nippon Glass Foundation for Materials Science for financial support for part of the present work;

D O I：

10.1080/01418618708209845

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：203 / 215

页数：13

共 23 条

[1] KINETICS AND MECHANISMS OF HIGH-TEMPERATURE CREEP IN SILICON-CARBIDE .1. REACTION-BONDED [J].