SELECTIVE TUNGSTEN CVD IN A HOT WALLED REACTOR BY SILANE REDUCTION OF WF6

被引:6
作者
GORCZYCA, TB
DOUGLAS, LR
GOROWITZ, B
WILSON, RH
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D O I
10.1149/1.2097591
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2765 / 2766
页数:2
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[3]  
Kotani H., 1987, IEDM, P217
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KUSUMOTO Y, 1988, TUNGSTEN OTHER REFRA, V3, P103
[5]  
NISHIYAMA A, 1988, S VLSI TECHNOLOGY, P97
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Ohba T., 1987, IEDM, P213
[7]   INTERFACIAL STRUCTURE OF TUNGSTEN LAYERS FORMED BY SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].
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