DISLOCATIONS IN HGCDTE/CDTE AND HGCDTE/CDZNTE HETEROJUNCTIONS

被引：27

作者：

YOSHIKAWA, M

MARUYAMA, K

SAITO, T

MAEKAWA, T

TAKIGAWA, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.574214

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：3052 / 3054

页数：3

共 13 条

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[8] EFFECTS INFLUENCING THE STRUCTURAL INTEGRITY OF SEMICONDUCTORS AND THEIR ALLOYS [J].

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[9] MISFIT AND THREADING DISLOCATIONS IN HGCDTE EPITAXY [J].

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