CHEMISORPTION OF FLUOROCARBON FREE-RADICALS ON SILICON AND SIO2

被引:30
作者
JOYCE, S
LANGAN, JG
STEINFELD, JI
机构
关键词
D O I
10.1063/1.454077
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:2027 / 2032
页数:6
相关论文
共 36 条
[1]   C-13 SEPARATION BY IRMPD OF MIXTURES OF C2F6 AND BR2 [J].
ARAI, S ;
WATANABE, T ;
ISHIKAWA, Y ;
OYAMA, T ;
HAYASHI, O ;
ISHII, T .
CHEMICAL PHYSICS LETTERS, 1984, 112 (03) :224-227
[2]  
BAKKE AA, 1980, J ELECTRON SPECTROSC, V20, P333, DOI 10.1016/0368-2048(80)85030-4
[3]  
Behrisch R., 1981, SPUTTERING PARTICLE, V1
[4]   STUDY OF CHARGING AND DISSOCIATION OF SIO2 SURFACES BY AES [J].
CARRIERE, B ;
LANG, B .
SURFACE SCIENCE, 1977, 64 (01) :209-223
[5]  
CHUANG TJ, 1978, APPL SURF SCI, V2, P514
[6]  
CLARK DT, 1979, POLYM SURFACES
[7]  
Coburn J.W., 1982, PLASMA CHEM PLASMA P, V2, P1, DOI 10.1007/BF00566856
[8]   PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J].
COBURN, JW ;
WINTERS, HF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :391-403
[9]   INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J].
COBURN, JW .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5210-5213
[10]   FORMATION OF SILICON-CARBIDE IN SILICON SUBSTRATES DURING CF4/H2 DRY ETCHING [J].
COYLE, GJ ;
OEHRLEIN, GS .
APPLIED SURFACE SCIENCE, 1986, 25 (04) :423-434