A 10K-GATE 950-MHZ CML DEMONSTRATOR CIRCUIT MADE WITH A 1-MU-M TRENCH-ISOLATED BIPOLAR SILICON TECHNOLOGY

被引：2

作者：

DEPEY, MP

DELLOVA, F

CHATEAU, JM

MALLARDEAU, C

FRYERS, AJ

WOERNER, K

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND

[2] ECOLE NATL SUPER ELECTR & RADIOELECT,F-38031 GRENOBLE,FRANCE

[3] TELEFUNKEN ELECTR GMBH,DIV SEMICOND,D-1700 HEILBRONN,FED REP GER

来源：

关键词：

D O I：

10.1109/4.32006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：552 / 557

页数：6

共 9 条

[1]

DEPEY M, 1987, 4TH P ANN ESPRIT C, P19

[2]

Hayasaka A., 1982, International Electron Devices Meeting. Technical Digest, P62

[3]

MALLARDEAU C, 1988, 18TH P EUR SOL STAT

NING, TH ;

ISAAC, RD .

[5]

NISHIMURA T, 1986, ISSCC, P76

[6]

OHUCHI M, 1986, IEEE 1986 CICC, P576

[7]

ROCHE M, 1987, 17TH P EUR SOL STAT, P507

[8]

SUZUKI M, 1987, IEEE J SOLID STATE C, V22

[9]

ULLRICH H, 1985, ISSCC, P200