RADIATION EVALUATION OF COMMERCIAL FERROELECTRIC NONVOLATILE MEMORIES

被引：28

作者：

BENEDETTO, JM ^{[1
]}

DELANCEY, WM ^{[1
]}

OLDHAM, TR ^{[1
]}

MCGARRITY, JM ^{[1
]}

TIPTON, CW ^{[1
]}

BRASSINGTON, M ^{[1
]}

FISCH, DE ^{[1
]}

机构：

[1] NATL SEMICOND CORP,SANTA CLARA,CA 95052

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/23.124125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric (FE) on complementary metal-oxide semiconductor (CMOS) 4-kbit nonvolatile memories, 8-bit octal latches (with and without FE), and process control test chips were used to establish a baseline characterization of the radiation response of CMOS/FE integrated devices and to determine whether the additional FE processing caused significant degradation to the baseline CMOS process. Functional failure of all 4-kbit memories and octal latches occurred at total doses of between 2 and 4 krad(Si), most likely due to field-oxide effects in the underlying CMOS. No significant difference was observed between the radiation response of devices with and without the FE film in this commercial process.

引用

页码：1410 / 1414

页数：5

共 10 条

[1] THE EFFECT OF IONIZING-RADIATION ON SOL-GEL FERROELECTRIC PZT CAPACITORS [J].