LASER PROCESSING OF MATERIALS

[1] SURFACE NORMALIZATION OF SENSITIZED STAINLESS-STEEL BY LASER SURFACE MELTING [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1248 - 1255

[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358

[3] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466

[4] GNANAMUTHU DS, 1979, LASER SOLID INTERACT, V50, P173

[5] ANNEALING OF TE-IMPLANTED GAAS BY RUBY-LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 147 - 149

[6] KEAR BH, 1978, JUL P SAG C REC ADV

[7] UNIDIRECTIONAL CONTRACTION IN BORON-IMPLANTED LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 801 - 803

[8] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 864 - 866

[9] FORMATION OF A NONCRYSTALLINE PHASE IN ALUMINUM IRRADIATED WITH A PULSED RUBY-LASER [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (02) : 88 - 91

[10] P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 338 - 340

[1] SURFACE NORMALIZATION OF SENSITIZED STAINLESS-STEEL BY LASER SURFACE MELTING [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1248 - 1255

[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358

[3] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466

[4] GNANAMUTHU DS, 1979, LASER SOLID INTERACT, V50, P173

[5] ANNEALING OF TE-IMPLANTED GAAS BY RUBY-LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 147 - 149

[6] KEAR BH, 1978, JUL P SAG C REC ADV

[7] UNIDIRECTIONAL CONTRACTION IN BORON-IMPLANTED LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 801 - 803

[8] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 864 - 866

[9] FORMATION OF A NONCRYSTALLINE PHASE IN ALUMINUM IRRADIATED WITH A PULSED RUBY-LASER [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (02) : 88 - 91

[10] P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 338 - 340