ION-IMPLANTED SILICON-ELECTROLYTE INTERFACE

被引：3

作者：

PHAM, MT ^{[1
]}

HUELLER, J ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,ZENT INST KERNFORSCH,DDR-8051 DRESDEN,GER DEM REP

来源：

JOURNAL OF APPLIED ELECTROCHEMISTRY | 1977年 / 7卷 / 06期

关键词：

D O I：

10.1007/BF00616765

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：531 / 537

页数：7

共 21 条

[1] ROLE OF RADIATION-DAMAGE ON CURRENT-VOLTAGE CHARACTERISTICS OF P-N-JUNCTIONS [J].

ASHBURN, P ;

MORGAN, DV .

SOLID-STATE ELECTRONICS, 1974, 17 (07) :689-698

[2]

Chan Y. K., 1973, Journal of Non-Crystalline Solids, V12, P314, DOI 10.1016/0022-3093(73)90003-3

[3]

Crowder B. L., 1970, Radiation Effects, V6, P63, DOI 10.1080/00337577008235047

[4]

DAVIES DE, 1971, ION IMPLANTATION SEM, P23

[5]

EFIMOV EA, 1960, DOKL AKAD NAUK SSSR+, V130, P353

[6]

GERISCHER H, 1970, PHYSICAL CHEMISTRY, V9

[7] ELECTRICAL AND PHYSICAL MEASUREMENTS ON SILICON IMPLANTED WITH CHANNELED AND NONCHANNELED DOPANT IONS [J].

GIBSON, WM ;

MARTIN, FW ;

STENSGAARD, R ;

JENSEN, FP ;

MEYER, NI ;

GALSTER, G ;

JOHANSEN, A ;

OLSEN, JS .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :675-+

[8] KAPAZITAT UND LEITWERT VON GERMANIUM-ELEKTRODEN UND SILIZIUM-ELEKTRODEN .1. UBER DIE IMPEDANZ VON HALBLEITER-ELEKTROLYT-GRENZFLACHEN [J].

GOBRECHT, H ;

MEINHARDT, O .

BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE, 1963, 67 (02) :142-151

[9] DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].

GOSSICK, BR .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1214-1218

[10]

HUELLER J, 1975, ZFK, V294, P207

← 1 2 3 →