ROLE OF RADIATION-DAMAGE ON CURRENT-VOLTAGE CHARACTERISTICS OF P-N-JUNCTIONS

[1] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 69 - +

[2] RESIDUAL ELECTRICALLY ACTIVE DEFECTS AFTER LATTICE REORDERING IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1971, 18 (12) : 548 - &

[3] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

[4] HARWELL 500 KV COCKCROFT-WALTON ACCELERATOR AND ITS USE AS A GENERAL RESEARCH FACILITY [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04): : 447 - &

[5] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[6] GWYN CW, 1972, IEEE T NUCL SCI, VNS19, P355

[7] Henderson B., 1972, DEFECTS CRYSTALLINE

[8] HIRVONEN JK, 1971, 2 P INT C ION IMPL S

[9] MCKELVEY JP, 1969, SOLID STATE SEMICOND

[10] OLDHAM WG, 1972, IEEE T NUCLEAR SCI, VNS19, P347

[1] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 69 - +

[2] RESIDUAL ELECTRICALLY ACTIVE DEFECTS AFTER LATTICE REORDERING IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1971, 18 (12) : 548 - &

[3] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

[4] HARWELL 500 KV COCKCROFT-WALTON ACCELERATOR AND ITS USE AS A GENERAL RESEARCH FACILITY [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04): : 447 - &

[5] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[6] GWYN CW, 1972, IEEE T NUCL SCI, VNS19, P355

[7] Henderson B., 1972, DEFECTS CRYSTALLINE

[8] HIRVONEN JK, 1971, 2 P INT C ION IMPL S

[9] MCKELVEY JP, 1969, SOLID STATE SEMICOND

[10] OLDHAM WG, 1972, IEEE T NUCLEAR SCI, VNS19, P347