ANALYSIS FOR SI CONTAMINATION IN GAP

被引：4

作者：

LUTHER, LC

VERLEUR, HW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 07期

关键词：

D O I：

10.1149/1.2408284

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1221 / &

共 17 条

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TRUMBORE, FA ;

FROSCH, CJ ;

LUKE, CL ;

MALM, DL .

ANALYTICAL CHEMISTRY, 1967, 39 (03) :350-&

[2]

BASS SJ, 1967, GALLIUM ARSENIDE, P41

[3]

BASS SJ, 1968, J CRYST GROWTH, V3, P4

[4] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

FROSCH, CJ ;

HENRY, CH .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5631-&

[5]

FROSCH C, PRIVATE COMMUNICATIO

[6] PREPARATION AND PROPERTIES OF EPITAXIAL GALLIUM PHOSPHIDE [J].

KAMATH, GS ;

BOWMAN, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :192-&

[7]

KIM CK, PRIVATE COMMUNICATIO

[8]

KOMETANI TY, PRIVATE COMMUNICATIO

[9] EPITAXIAL GROWTH OF ZINC- AND CADMIUM-DOPED GALLIUM PHOSPHIDE BY GALLIUM CHLORIDE VAPOR TRANSPORT [J].

LUTHER, LC ;

ROCCASECCA, DD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) :850-+

[10]

MALM DL, PRIVATE COMMUNICATIO

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