HIGH-SPEED BIPOLAR ICS USING SUPER SELF-ALIGNED PROCESS TECHNOLOGY

被引:10
作者
SAKAI, T
KOBAYASHI, Y
YAMAUCHI, H
SATO, M
MAKINO, T
机构
关键词
D O I
10.7567/JJAPS.20S1.155
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:155 / 159
页数:5
相关论文
共 5 条
  • [1] MODEL OF DOPED-OXIDE-SOURCE DIFFUSION IN SILICON
    GHOSHTAGORE, RN
    [J]. SOLID-STATE ELECTRONICS, 1974, 17 (10) : 1065 - 1073
  • [2] ISHIDA I, 1979, IEDM, P336
  • [3] MUKAI H, 1973, REV ELEC COMM LAB, P541
  • [4] ELEVATED ELECTRODE INTEGRATED-CIRCUITS
    SAKAI, T
    YAMAMOTO, Y
    KOBAYASHI, Y
    YAMAUTI, H
    ISHITANI, T
    SUDO, T
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 301 - 307
  • [5] SAKAI T, 1977, ISSCC DIG TECH PAPER, P196