EXCITON SCATTERING IN QUANTUM-WELLS AT LOW-TEMPERATURES

被引：52

作者：

OBERHAUSER, D

PANTKE, KH

HVAM, JM

WEIMANN, G

KLINGSHIRN, C

机构：

[1] ODENSE UNIV, INST FYS, DK-5230 ODENSE, DENMARK

[2] WALTER SCHOTTKY INST, W-8046 GARCHING, GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.47.6827

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The diffusion and the lifetime of excitons were determined via laser-induced gratings in high-quality GaAs/AlxGa1-xAs multiple quantum wells. The diffusion is governed by the interaction of the excitons with the interface roughness and with acoustic phonons. The exciton scattering rate was compared with the dephasing rate observed in subsequently performed photon echo experiments. The influence of interface-roughness scattering on the dephasing was found to be weak and independent of temperature for this coherent process. The exciton-phonon coupling deduced from diffusion shows an excellent agreement with theory, whereas the dephasing rates determined in our work and former contributions were found to agree only roughly with theoretically calculated values.

引用

页码：6827 / 6830

页数：4

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