INTERFACE-ROUGHNESS-CONTROLLED EXCITON MOBILITIES IN GAAS/AL0.37GA0.63AS QUANTUM-WELLS

被引：53

作者：

HILLMER, H

FORCHEL, A

SAUER, R

TU, CW

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] UNIV STUTTGART,INST PHYS 4,W-7000 STUTTGART 80,GERMANY

[3] UNIV ULM,HALBLEITERPHYS ABT,W-7900 ULM,GERMANY

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.42.3220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of the interface morphology on exciton transport is studied by space- and time-resolved spectroscopy of GaAs/Al0.37Ga0.63As quantum wells grown continuously and with growth interruption. The growth-interrupted quantum wells exhibit smaller lifetimes than continuously grown structures due to nonradiative contributions to recombination. The exciton mobility, in contrast, is significantly higher in the growth-interrupted samples, reflecting a reduction of interface-roughness scattering. © 1990 The American Physical Society.

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页码：3220 / 3223

页数：4

相关论文

共 24 条

[1] DIRECT IMAGING OF THE COLUMNAR STRUCTURE OF GAAS QUANTUM WELLS [J].

BIMBERG, D ;

CHRISTEN, J ;

FUKUNAGA, T ;

NAKASHIMA, H ;

MARS, DE ;

MILLER, JN .

SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (03) :257-263

[2] STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION [J].

BIMBERG, D ;

MARS, D ;

MILLER, JN ;

BAUER, R ;

OERTEL, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1014-1021

[3] DYNAMICS OF EXCITON TRANSFER BETWEEN MONOLAYER-FLAT ISLANDS IN SINGLE QUANTUM-WELLS [J].

DEVEAUD, B ;

DAMEN, TC ;

SHAH, J ;

TU, CW .

APPLIED PHYSICS LETTERS, 1987, 51 (11) :828-830

[4] TEMPERATURE-DEPENDENCE OF THE EXCITON POPULATION IN EMISSION-SPECTRA OF GAAS SINGLE QUANTUM WELLS WITH ENLARGED MONOLAYER-FLAT GROWTH ISLANDS [J].

FUJIWARA, K ;

KANAMOTO, K ;

TSUKADA, N .

PHYSICAL REVIEW B, 1989, 40 (14) :9698-9702

[5] PHOTOLUMINESCENCE FROM ALGAAS-GAAS SINGLE QUENTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

FUKUNAGA, T ;

KOBAYASHI, KLI ;

NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L510-L512

[6] INTERFACE ROUGHNESS SCATTERING AND ELECTRON MOBILITIES IN THIN GAAS QUANTUM WELLS [J].

GOTTINGER, R ;

GOLD, A ;

ABSTREITER, G ;

WEIMANN, G ;

SCHLAPP, W .

EUROPHYSICS LETTERS, 1988, 6 (02) :183-188

[7] EXPERIMENTAL AND THEORETICAL-STUDY OF SCATTERING MECHANISMS FOR 2D EXCITONS IN GAAS/ALGAAS QUANTUM WELLS [J].

HILLMER, H ;

FORCHEL, A ;

HANSMANN, S ;

MOROHASHI, M ;

MEIER, HP ;

PLOOG, K .

SOLID-STATE ELECTRONICS, 1989, 32 (12) :1771-1775

[8] OPTICAL INVESTIGATIONS ON THE MOBILITY OF TWO-DIMENSIONAL EXCITONS IN GAAS/GA1-XALXAS QUANTUM WELLS [J].

HILLMER, H ;

FORCHEL, A ;

HANSMANN, S ;

MOROHASHI, M ;

LOPEZ, E ;

MEIER, HP ;

PLOOG, K .

PHYSICAL REVIEW B, 1989, 39 (15) :10901-10912

[9] TWO-DIMENSIONAL EXCITON TRANSPORT IN GAAS/GAALAS QUANTUM WELLS [J].

HILLMER, H ;

HANSMANN, S ;

FORCHEL, A ;

MOROHASHI, M ;

LOPEZ, E ;

MEIER, HP ;

PLOOG, K .

APPLIED PHYSICS LETTERS, 1988, 53 (20) :1937-1939

[10]

HILLMER H, 1989, THESIS U STUTTGART