DYNAMICS OF EXCITON TRANSFER BETWEEN MONOLAYER-FLAT ISLANDS IN SINGLE QUANTUM-WELLS

被引：71

作者：

DEVEAUD, B ^{[1
]}

DAMEN, TC ^{[1
]}

SHAH, J ^{[1
]}

TU, CW ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.98826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：828 / 830

页数：3

共 20 条

[1] EXCITON BINDING-ENERGY IN QUANTUM WELLS
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[2] LOCALIZATION INDUCED ELECTRON-HOLE TRANSITION RATE ENHANCEMENT IN GAAS QUANTUM WELLS
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[3] PHOTOLUMINESCENCE STUDY OF INTERFACE DEFECTS IN HIGH-QUALITY GAAS-GAALAS SUPERLATTICES
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REGRENY, A
EMERY, JY
CHOMETTE, A
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) : 1633 - 1640
[4] OBSERVATION OF ONE MONOLAYER SIZE FLUCTUATIONS IN A GAAS/GAALAS SUPERLATTICE
DEVEAUD, B
EMERY, JY
CHOMETTE, A
LAMBERT, B
BAUDET, M
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1078 - 1080
[5] PHOTOLUMINESCENCE FROM ALGAAS-GAAS SINGLE QUENTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L510 - L512
[6] RECOMBINATION ENHANCEMENT DUE TO CARRIER LOCALIZATION IN QUANTUM WELL STRUCTURES
GOBEL, EO
JUNG, H
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PLOOG, K
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (17) : 1588 - 1591
[7] EFFECT OF WELL SIZE FLUCTUATION ON PHOTO-LUMINESCENCE SPECTRUM OF ALAS-GAAS SUPER-LATTICES
GOLDSTEIN, L
HORIKOSHI, Y
TARUCHA, S
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1489 - 1492
[8] BINDING-ENERGIES OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES
GREENE, RL
BAJAJ, KK
[J]. SOLID STATE COMMUNICATIONS, 1983, 45 (09) : 831 - 835
[9] INTERFACE DISORDER IN GAAS/ALGAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE-TEMPERATURE
HAYAKAWA, T
SUYAMA, T
TAKAHASHI, K
KONDO, M
YAMAMOTO, S
YANO, S
HIJIKATA, T
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 952 - 954
[10] THEORY OF EXCITONS IN SEMICONDUCTOR QUANTUM WELLS CONTAINING DEGENERATE ELECTRONS OR HOLES
KLEINMAN, DA
[J]. PHYSICAL REVIEW B, 1985, 32 (06): : 3766 - 3771

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