INTERFACE-ROUGHNESS-CONTROLLED EXCITON MOBILITIES IN GAAS/AL0.37GA0.63AS QUANTUM-WELLS

被引：53

作者：

HILLMER, H

FORCHEL, A

SAUER, R

TU, CW

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] UNIV STUTTGART,INST PHYS 4,W-7000 STUTTGART 80,GERMANY

[3] UNIV ULM,HALBLEITERPHYS ABT,W-7900 ULM,GERMANY

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.42.3220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of the interface morphology on exciton transport is studied by space- and time-resolved spectroscopy of GaAs/Al0.37Ga0.63As quantum wells grown continuously and with growth interruption. The growth-interrupted quantum wells exhibit smaller lifetimes than continuously grown structures due to nonradiative contributions to recombination. The exciton mobility, in contrast, is significantly higher in the growth-interrupted samples, reflecting a reduction of interface-roughness scattering. © 1990 The American Physical Society.

引用

页码：3220 / 3223

页数：4

共 24 条

[21] CATHODOLUMINESCENCE STUDY OF SUBSTRATE OFFSET EFFECTS ON INTERFACE STEP STRUCTURES OF QUANTUM WELLS [J].