TEMPERATURE-DEPENDENCE OF THE EXCITON POPULATION IN EMISSION-SPECTRA OF GAAS SINGLE QUANTUM WELLS WITH ENLARGED MONOLAYER-FLAT GROWTH ISLANDS

被引:63
作者
FUJIWARA, K
KANAMOTO, K
TSUKADA, N
机构
关键词
D O I
10.1103/PhysRevB.40.9698
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:9698 / 9702
页数:5
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共 25 条
[1]   LOW-TEMPERATURE EXCITON TRAPPING ON INTERFACE DEFECTS IN SEMICONDUCTOR QUANTUM WELLS [J].
BASTARD, G ;
DELALANDE, C ;
MEYNADIER, MH ;
FRIJLINK, PM ;
VOOS, M .
PHYSICAL REVIEW B, 1984, 29 (12) :7042-7044
[2]   CATHODOLUMINESCENCE ATOMIC SCALE IMAGES OF MONOLAYER ISLANDS AT GAAS/GAALAS INTERFACES [J].
BIMBERG, D ;
CHRISTEN, J ;
FUKUNAGA, T ;
NAKASHIMA, H ;
MARS, DE ;
MILLER, JN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1191-1197
[3]  
Chemla D. S., 1987, Physics and Applications of Quantum Wells and Superlattices. Proceedings of a NATO Advanced Study Institute, P423
[4]   EFFECT OF TEMPERATURE ON EXCITON TRAPPING ON INTERFACE DEFECTS IN GAAS QUANTUM WELLS [J].
DELALANDE, C ;
MEYNADIER, MH ;
VOOS, M .
PHYSICAL REVIEW B, 1985, 31 (04) :2497-2498
[5]   DYNAMICS OF EXCITON TRANSFER BETWEEN MONOLAYER-FLAT ISLANDS IN SINGLE QUANTUM-WELLS [J].
DEVEAUD, B ;
DAMEN, TC ;
SHAH, J ;
TU, CW .
APPLIED PHYSICS LETTERS, 1987, 51 (11) :828-830
[6]   MODIFIED EXCITONIC RESONANCES IN GAAS/ALAS MULTIPLE QUANTUM-WELL HETEROSTRUCTURES WITH ULTRATHIN BARRIERS [J].
FUJIWARA, K ;
DEMIGUEL, JL ;
TAPFER, L ;
PLOOG, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (04) :323-328
[7]   PHOTOLUMINESCENCE LINE-SHAPE OF EXCITONS IN GAAS SINGLE-QUANTUM WELLS WITH AND WITHOUT HETEROINTERFACE ORDERING [J].
FUJIWARA, K ;
KANAMOTO, K ;
TSUKADA, N ;
MIYATAKE, H ;
KOYAMA, H .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (03) :1488-1491
[8]   IMPROVED HETEROINTERFACE AND VERTICAL TRANSPORT IN GAAS SINGLE QUANTUM WELL CONFINED BY ALL-BINARY GAAS/ALAS SHORT-PERIOD-SUPERLATTICES [J].
FUJIWARA, K ;
DEMIGUEL, JL ;
PLOOG, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L405-L407
[9]   INPLANE PHOTOCURRENT SPECTROSCOPY OF UNDOPED GAAS/ALAS QUANTUM WELL HETEROSTRUCTURES [J].
FUJIWARA, K ;
TSUKADA, N ;
NAKAYAMA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (10) :L1832-L1834
[10]   LINEAR-POLARIZATION EFFECTS ON PHOTOLUMINESCENCE PROPERTIES OF GAAS/ALAS QUANTUM WELL HETEROSTRUCTURES [J].
FUJIWARA, K ;
TSUKADA, N ;
NAKAYAMA, T ;
NISHINO, T .
SOLID STATE COMMUNICATIONS, 1989, 69 (01) :63-66