MODIFIED EXCITONIC RESONANCES IN GAAS/ALAS MULTIPLE QUANTUM-WELL HETEROSTRUCTURES WITH ULTRATHIN BARRIERS

被引:8
作者
FUJIWARA, K [1 ]
DEMIGUEL, JL [1 ]
TAPFER, L [1 ]
PLOOG, K [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 44卷 / 04期
关键词
D O I
10.1007/BF00624599
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:323 / 328
页数:6
相关论文
共 25 条
[1]   ELECTRONIC-STRUCTURE OF TWO-DIMENSIONAL SEMICONDUCTOR SYSTEMS [J].
ALTARELLI, M .
JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) :472-487
[2]   HIGH-PERFORMANCE (ALAS/N-GAAS SUPERLATTICE) GAAS 2DEGFETS WITH STABILIZED THRESHOLD VOLTAGE [J].
BABA, T ;
MIZUTANI, T ;
OGAWA, M ;
OHATA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L654-L656
[3]  
CASEY HC, 1978, HETEROSTRUCTURE LA A
[4]   UNAMBIGUOUS OBSERVATION OF THE 2S STATE OF THE LIGHT-HOLE AND HEAVY-HOLE EXCITONS IN GAAS-(ALGA) AS MULTIPLE-QUANTUM-WELL STRUCTURES [J].
DAWSON, P ;
MOORE, KJ ;
DUGGAN, G ;
RALPH, HI ;
FOXON, CTB .
PHYSICAL REVIEW B, 1986, 34 (08) :6007-6010
[5]  
DEMIGUEL JL, 1985, APPL PHYS LETT, V47, P8361
[6]  
Dingle R, 1975, FESTKORPERPROBLEME, V15, P21
[7]   PHOTOLUMINESCENCE OF GAAS SINGLE QUANTUM WELLS CONFINED BY SHORT-PERIOD ALL-BINARY GAAS/ALAS SUPERLATTICES [J].
FUJIWARA, K ;
PLOOG, K .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1222-1224
[8]   OPTICAL-PROPERTIES OF (AIAS)N(GAAS)N SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
ISHIBASHI, A ;
MORI, Y ;
ITABASHI, M ;
WATANABE, N .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2691-2695
[9]   PHOTO-LUMINESCENCE OF AN ALAS-GAAS SUPER-LATTICE GROWN BY MBE IN THE 0.7-0.8-MU-M WAVELENGTH REGION [J].
ISHIBASHI, T ;
SUZUKI, Y ;
OKAMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) :L623-L626
[10]   ELECTRONIC-PROPERTIES OF SEMICONDUCTOR ALLOY SYSTEMS [J].
JAROS, M .
REPORTS ON PROGRESS IN PHYSICS, 1985, 48 (08) :1091-&