EFFECT OF TEMPERATURE ON EXCITON TRAPPING ON INTERFACE DEFECTS IN GAAS QUANTUM WELLS

被引：92

作者：

DELALANDE, C

MEYNADIER, MH

VOOS, M

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.31.2497

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：2497 / 2498

页数：2

相关论文

共 5 条

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