SURFACE DAMAGE PRODUCED BY 20 KEV GA BOMBARDMENT OF GE(001)

被引：27

作者：

BELLON, P

CHEY, SJ

VANNOSTRAND, JE

GHALY, M

CAHILL, DG

AVERBACK, RS

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] CEA SACLAY,SRMP,F-91191 GIF SUR YVETTE,FRANCE

来源：

SURFACE SCIENCE | 1995年 / 339卷 / 1-2期

关键词：

COMPUTER SIMULATIONS; GERMANIUM; ION IMPLANTATION; LOW INDEX SINGLE CRYSTAL SURFACES; MOLECULAR DYNAMICS; SPUTTERING; SURFACE DEFECTS; SURFACE ROUGHENING;

D O I：

10.1016/0039-6028(95)00656-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Surface damage on Ge(100) due to single 20 keV Ga+ ion impacts was investigated by in situ scanning tunneling microscopy (STM). Two types of damage structures were observed: the first appears as small disruptions of the surface on the scale of 1X1 nm(2), while the second consists of large craters on the scale of 85 nm(2). The small damage features are produced by a large fraction of the ions, but only similar to 10(-3) ions produce craters.

引用

页码：135 / 141

页数：7

共 14 条

[1] A MODEL FOR SURFACE DAMAGE IN ION-IRRADIATED SOLIDS [J].