ROUGHENING INSTABILITY AND EVOLUTION OF THE GE(001) SURFACE DURING ION SPUTTERING

被引：337

作者：

CHASON, E

MAYER, TM

KELLERMAN, BK

MCILROY, DT

HOWARD, AJ

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.72.3040

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the temperature-dependent roughening kinetics of Ge surfaces during low energy ion sputtering using energy dispersive x-ray reflectivity. At 150-degrees-C and below, the surface is amorphized by ion impact and roughens to a steady state small value. At 250-degrees-C the surface remains crystalline, roughens exponentially with time, and develops a pronounced ripple topography. At higher temperature this exponential roughening is slower, with an initial sublinear time dependence. A model that contains a balance between smoothing by surface diffusion and viscous flow and roughening by atom removal explains the kinetics. Ripple formation is a result of a curvature-dependent sputter yield.

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页码：3040 / 3043

页数：4

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