OPTICAL INVESTIGATION OF A VERY ASYMMETRIC DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE

被引：12

作者：

WHITE, CRH

SKOLNICK, MS

EAVES, L

LEADBEATER, ML

HENINI, M

HUGHES, OH

HILL, G

PATE, MA

机构：

[1] UNIV SHEFFIELD,DEPT PHYS,SHEFFIELD S3 7RH,S YORKSHIRE,ENGLAND

[2] UNIV SHEFFIELD,DEPT ELECT & ELECTR ENGN,SHEFFIELD S3 7RH,S YORKSHIRE,ENGLAND

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.45.6721

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The variation with applied bias of the electron charge density in the quantum well of a very asymmetric double-barrier resonant-tunneling structure is investigated using low-intensity photoluminescence and magneto-optical techniques. The observation of inverted bistability phenomena using optical techniques is reported. The very strong effects of illumination intensity on both the electron charge density in the quantum well and the tunnel current in this system are analyzed.

引用

页码：6721 / 6730

页数：10

共 38 条

[1]

ALVES ES, 1988, ELECTRON LETT, V24, P1191

[2]

ALVES ES, 1988, 1ST P INT C EL MAT T, P165

[3] TUNNELING OF PHOTOEXCITED HOLES THROUGH A DOUBLE-BARRIER RESONANT TUNNELING STRUCTURE OBSERVED BY TIME-RESOLVED PHOTOLUMINESCENCE [J].