CURRENT BISTABILITY IN DOUBLE-BARRIER RESONANT-TUNNELING DEVICES

被引：53

作者：

FOSTER, TJ ^{[1
]}

LEADBEATER, ML ^{[1
]}

EAVES, L ^{[1
]}

HENINI, M ^{[1
]}

HUGHES, OH ^{[1
]}

PAYLING, CA ^{[1
]}

SHEARD, FW ^{[1
]}

SIMMONDS, PE ^{[1
]}

TOOMBS, GA ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.39.6205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6205 / 6207

页数：3

共 8 条

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[2] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - REPLY [J].

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TSUI, DC ;

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PHYSICAL REVIEW LETTERS, 1987, 59 (14) :1623-1623

[3] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1256-1259

[4] EVIDENCE FOR SEQUENTIAL TUNNELLING AND CHARGE BUILDUP IN DOUBLE BARRIER RESONANT TUNNELLING DEVICES [J].

PAYLING, CA ;

ALVES, ES ;

EAVES, L ;

FOSTER, TJ ;

HENINI, M ;

HUGHES, OH ;

SIMMONDS, PE ;

SHEARD, FW ;

TOOMBS, GA ;

PORTAL, JC .

SURFACE SCIENCE, 1988, 196 (1-3) :404-409

[5] SPACE-CHARGE BUILDUP AND BISTABILITY IN RESONANT-TUNNELING DOUBLE-BARRIER STRUCTURES [J].

SHEARD, FW ;

TOOMBS, GA .

APPLIED PHYSICS LETTERS, 1988, 52 (15) :1228-1230

[6] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - COMMENT [J].

SOLLNER, TCLG .

PHYSICAL REVIEW LETTERS, 1987, 59 (14) :1622-1622

[7]

TOOMBS GA, 1988, I PHYS C SER, V91, P581

[8] EQUIVALENCE BETWEEN RESONANT TUNNELING AND SEQUENTIAL TUNNELING IN DOUBLE-BARRIER DIODES [J].

WEIL, T ;

VINTER, B .

APPLIED PHYSICS LETTERS, 1987, 50 (18) :1281-1283

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