RESONANT TUNNELING IN MAGNETIC-FIELDS - EVIDENCE FOR SPACE-CHARGE BUILDUP

被引：175

作者：

GOLDMAN, VJ ^{[1
]}

TSUI, DC ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.35.9387

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9387 / 9390

页数：4

共 18 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2]

CHOU MJ, 1985, LAYERED STRUCTURES E, V37, P7

[3]

GOLDMAN II, 1961, PROBLEMS QUANTUM MEC, pCH2

[4] TRANSPORT IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE ;

TSANG, WT .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2693-2695

[5] NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS [J].

HICKMOTT, TW ;

SOLOMON, PM ;

FISCHER, R ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2844-2853

[6] MAGNETOTUNNELING FROM ACCUMULATION LAYERS IN ALXGA1-XAS CAPACITORS [J].

HICKMOTT, TW .

PHYSICAL REVIEW B, 1985, 32 (10) :6531-6543

[7] EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES [J].

INOUE, K ;

SAKAKI, H ;

YOSHINO, J ;

YOSHIOKA, Y .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :973-975

[8] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J].

LURYI, S .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :490-492

[9] RESONANT TUNNELING OF HOLES IN ALAS-GAAS-ALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

WANG, WI ;

RICCO, B ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :415-417

[10] RESONANT MAGNETOTUNNELING IN GAALAS-GAAS-GAALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

ESAKI, L ;

WANG, WI .

PHYSICAL REVIEW B, 1986, 33 (04) :2893-2896

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