THERMAL EFFECTS IN JFET AND MOSFET DEVICES AT CRYOGENIC TEMPERATURES

[1] THE THERMAL CONDUCTIVITY OF GERMANIUM AND SILICON BETWEEN 2-DEGREES-K AND 300-DEGREES-K [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215): : 502 - 514

[2] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 797 - &

[3] LOW FREQUENCY NOISE IN MOS TRANSISTORS .2. EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 813 - &

[4] GERMANIUM FET - A NOVEL ELEMENT FOR LOW-NOISE PREAMPLIFIERS [J]. NUCLEAR INSTRUMENTS & METHODS, 1967, 54 (02): : 308 - +

[5] PINCH-OFF VOLTAGE SHIFTS IN MOSFETS AT HELIUM TEMPERATURES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2085 - &

[6] MOSFET OPERATION AT 4.2 K [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1968, 39 (10) : 1495 - &

[7] JOHNSON VJ, COMPENDIUM PROPERTIE

[8] SEMICONDUCTORS AT CRYOGENIC TEMPERATURES [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (10) : 1092 - &

[9] JORDAN AG, 1965, IEEE T ELECTRON DEVI, VED12, P148

[10] OPERATION OF A GERMANIUM FET AT LOW TEMPERATURES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1968, 39 (05) : 775 - &

[1] THE THERMAL CONDUCTIVITY OF GERMANIUM AND SILICON BETWEEN 2-DEGREES-K AND 300-DEGREES-K [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215): : 502 - 514

[2] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 797 - &

[3] LOW FREQUENCY NOISE IN MOS TRANSISTORS .2. EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 813 - &

[4] GERMANIUM FET - A NOVEL ELEMENT FOR LOW-NOISE PREAMPLIFIERS [J]. NUCLEAR INSTRUMENTS & METHODS, 1967, 54 (02): : 308 - +

[5] PINCH-OFF VOLTAGE SHIFTS IN MOSFETS AT HELIUM TEMPERATURES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2085 - &

[6] MOSFET OPERATION AT 4.2 K [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1968, 39 (10) : 1495 - &

[7] JOHNSON VJ, COMPENDIUM PROPERTIE

[8] SEMICONDUCTORS AT CRYOGENIC TEMPERATURES [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (10) : 1092 - &

[9] JORDAN AG, 1965, IEEE T ELECTRON DEVI, VED12, P148

[10] OPERATION OF A GERMANIUM FET AT LOW TEMPERATURES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1968, 39 (05) : 775 - &