ANNEALING OF HEAVILY ARSENIC-DOPED SILICON - ELECTRICAL DEACTIVATION AND A NEW DEFECT COMPLEX

被引：142

作者：

PANDEY, KC ^{[1
]}

ERBIL, A ^{[1
]}

CARGILL, GS ^{[1
]}

BOEHME, RF ^{[1
]}

VANDERBILT, D ^{[1
]}

机构：

[1] HARVARD UNIV,LYMAN LAB PHYS,CAMBRIDGE,MA 02138

来源：

关键词：

D O I：

10.1103/PhysRevLett.61.1282

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1282 / 1285

页数：4

共 17 条

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ERBIL, A
WEBER, W
CARGILL, GS
BOEHME, RF
[J]. PHYSICAL REVIEW B, 1986, 34 (02): : 1392 - 1394
[6] ERBIL A, 1985, MATER RES SOC S P, V41, P275
[7] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON
FAIR, RB
WEBER, GR
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279
[8] FISTUL VI, 1969, HEAVILY DOPED SEMICO, pCH5
[9] Hu S. M., 1973, ATOMIC DIFFUSION SEM, P217
[10] NORTHRUP JE, 1987, B AM PHYS SOC, V32, P720