OBSERVATION OF BIAS-DEPENDENT CAPTURE-EMISSION PROCESSES IN MBE-GROWN GAAS-LAYERS

被引:1
作者
HSU, WC
CHANG, CY
HAU, SS
WANG, SJ
机构
[1] Natl Cheng Kung Univ, Tainan, Taiwan, Natl Cheng Kung Univ, Tainan, Taiwan
关键词
Part of the work was supported by the National Science Council. R.O.C;
D O I
10.1016/0038-1101(87)90154-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
9
引用
收藏
页码:221 / 226
页数:6
相关论文
共 8 条
[1]   CAPTURE-EMISSION PROCESS IN DOUBLE POOLE-FRENKEL WELL TRAPS - THEORY AND EXPERIMENTS [J].
CHANG, CY ;
HSU, WC ;
WANG, SJ ;
HAU, SS .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :1042-1045
[2]  
Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647
[3]  
FRENKEL J, 1938, TECH PHYS USSR, V5, P1685
[4]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[5]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[6]   FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022
[7]  
WANG KL, 1983, APPL PHYS LETT, V42, P838
[8]  
WANG WL, 1984, ELECTRON DEV MATERIA, P66