OBSERVATION OF VALLEY SPLITTING IN (111) N-TYPE SILICON INVERSION-LAYERS

被引：8

作者：

ENGLERT, T ^{[1
]}

TSUI, DC ^{[1
]}

LANDWEHR, G ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 33卷 / 12期

关键词：

D O I：

10.1016/0038-1098(80)90782-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1167 / 1169

页数：3

共 16 条

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[9] THEORY OF VALLEY SPLITTING IN AN N-CHANNEL (100) INVERSION LAYER OF SI .1. FORMULATION BY EXTENDED ZONE EFFECTIVE MASS THEORY [J].

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[10] THEORY OF VALLEY SPLITTING IN AN N-CHANNEL (100) INVERSION LAYER OF SI .3. ENHANCEMENT OF SPLITTINGS BY MANY-BODY EFFECTS [J].

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