FINE STRUCTURES AND ENERGY-DISTRIBUTION OF SECONDARY ELECTRON EMISSION FROM SI(111)

被引：9

作者：

GOTO, K ^{[1
]}

ISHIKAWA, K ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL, DEPT FINE MEASUREMENTS, SHOWA, NAGOYA, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.1661847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：132 / 137

页数：6

相关论文

共 38 条

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[8] ELECTRON-BEAM ASSISTED ADSORPTION ON SI(111) SURFACE
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[9] VARIATION OF SECONDARY ELECTRON EMISSION OF SINGLE CRYSTALS WITH ANGLE OF INCIDENCE
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[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (02) : 55 - 57
[10] ADSORPTION OF OXYGEN ON SILICON
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