ELECTRON-BEAM ASSISTED ADSORPTION ON SI(111) SURFACE

被引：115

作者：

COAD, JP

BISHOP, HE

RIVIERE, JC

机构：

来源：

SURFACE SCIENCE | 1970年 / 21卷 / 02期

关键词：

D O I：

10.1016/0039-6028(70)90232-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：253 / &

共 17 条

[1] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM [J].

ALLEN, FG ;

EISINGER, J ;

HAGSTRUM, HD ;

LAW, JT .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) :1563-1571

[2] WORK FUNCTION AND EMISSION STUDIES ON CLEAN SILICON SURFACES [J].

ALLEN, FG .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :119-&

[3] MEASUREMENT OF OXYGEN ADSORPTION ON SILICON BYELLIPSOMETRY [J].

ARCHER, RJ ;

GOBELI, GW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) :343-&

[4] ESTIMATES OF EFFICIENCIES OF PRODUCTION AND DETECTION OF ELECTRON-EXCITED AUGER EMISSION [J].

BISHOP, HE ;

RIVIERE, JC .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) :1740-&

[5] AUGER SPECTROSCOPY OF SILICON [J].

BISHOP, HE ;

RIVIERE, JC ;

TAYLOR, NJ .

SURFACE SCIENCE, 1969, 17 (02) :462-&

[6] OXYGEN STICKING COEFFICIENTS ON CLEAN (111) SILICON SURFACES [J].

CAROSELLA, CA ;

COMAS, J .

SURFACE SCIENCE, 1969, 15 (02) :303-+

[7] CARBON CONTAMINATION OF SI(111) SURFACES [J].

CHARIG, JM ;

SKINNER, DK .

SURFACE SCIENCE, 1969, 15 (02) :277-&

[8] SOME SURFACE PROPERTIES OF SILICON-CARBIDE CRYSTALS [J].

DILLON, JA ;

SCHLIER, RE ;

FARNSWORTH, HE .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (05) :675-679

[9] ADSORPTION OF OXYGEN ON SILICON [J].

EISINGER, J ;

LAW, JT .

JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (02) :410-412

[10] THE ADSORPTION OF OXYGEN ON CLEAN SILICON SURFACES [J].

GREEN, M ;

MAXWELL, KH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (1-2) :145-150

← 1 2 →