DEEP P-N-JUNCTION IN HG1-XCDXTE CREATED BY ION MILLING

被引：42

作者：

BELAS, E

HOSCHL, P

GRILL, R

FRANC, J

MORAVEC, P

LISCHKA, K

SITTER, H

TOTH, A

机构：

[1] JOHANNES KEPLER UNIV, OPTOELECTR RES INST, A-4040 LINZ, AUSTRIA

[2] HUNGARIAN ACAD SCI, TECH PHYS RES INST, H-1361 BUDAPEST 5, HUNGARY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 09期

关键词：

D O I：

10.1088/0268-1242/8/9/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thick n-type layers near the surface of p-Hg1-xCdxTe produced as a result of low energy ion milling have been investigated. EBIC measurements of cleaved cross sections show the depth and shape of the p-n junction under the surface of (HgCd)Te. An analysis of the n-type layers by differential Hall effect measurements is reported. It was found that the electron concentration in the n-type layer is of the order of 10(15) cm-3 and is nearly constant from the surface to the p-n junction. A diminishing density of etch pits was found on the surfaces influenced by ion milling. A model for the p-n conversion during ion milling is discussed.

引用

页码：1695 / 1699

页数：5

共 13 条

[1] THE INFLUENCE OF DISLOCATIONS ON MERCURY SELF-DIFFUSION IN EPITAXIAL AND BULK GROWN CDXHG1-XTE [J].