OPTICAL, PHOTOELECTRICAL, DEEP LEVEL AND PHOTOREFRACTIVE CHARACTERIZATION OF CDTE-V

被引：21

作者：

ZIELINGER, JP

TAPIERO, M

GUELLIL, Z

ROOSEN, G

DELAYE, P

LAUNAY, JC

MAZOYER, V

机构：

[1] CTR SCI ORSAY,INST OPT THEOR & APPLIQUEE,CNRS,F-91403 ORSAY,FRANCE

[2] UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(93)90059-V

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Characterization by different optical techniques, such as photo-induced current transient spectroscopy (PICTS), absorption, photoconductivity spectra and photorefractive wave mixing, of semi-insulating V-doped CdTe crystals prepared by the modified Bridgman method are presented. The aim of this joint research programme is to provide information which can lead to the understanding of the complex processes which determine photorefractive effects and to optimize the key parameters.

引用

页码：273 / 278

页数：6

共 18 条

[1]

AGRINSKAYA NV, 1989, SOV PHYS SEMICOND+, V23, P274

[2]

BABII PL, 1979, SOV PHYS SEMICOND, V12, P1310

[3] INVESTIGATION OF DEEP LEVELS IN HIGH-RESISTIVITY BULK MATERIALS BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY .2. EVALUATION OF VARIOUS SIGNAL-PROCESSING METHODS [J].