INVESTIGATION OF DEEP LEVELS IN HIGH-RESISTIVITY BULK MATERIALS BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY .1. REVIEW AND ANALYSIS OF SOME BASIC PROBLEMS

被引：96

作者：

BALLAND, JC

ZIELINGER, JP

NOGUET, C

TAPIERO, M

机构：

[1] CNRS, Strasbourg, Fr, CNRS, Strasbourg, Fr

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1986年 / 19卷 / 01期

关键词：

D O I：

10.1088/0022-3727/19/1/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

19

引用

收藏

页码：57 / 70

页数：14

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[1] INVESTIGATION OF DEEP LEVELS IN HIGH-RESISTIVITY BULK MATERIALS BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY .2. EVALUATION OF VARIOUS SIGNAL-PROCESSING METHODS
BALLAND, JC
ZIELINGER, JP
TAPIERO, M
GROSS, JG
NOGUE, C
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1986, 19 (01) : 71 - 87
[2] BOIS D, 1980, ELECTRONIC STRUCTURE, P345
[3] BRAUNLICH P, 1979, TOP APPL PHYS, V37, pCH2
[4] Bube R.H., 1960, PHOTOCONDUCTIVITY SO
[5] BUBE RH, 1974, ELECTRONIC PROPERTIE
[6] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS
CHANTRE, A
VINCENT, G
DUBOIS
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5335 - 5359
[7] GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS
FAIRMAN, RD
CHEN, RT
OLIVER, JR
CHEN, DR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 135 - 140
[8] DEEP-LEVEL SPECTROSCOPY IN HIGH-RESISTIVITY MATERIALS
HURTES, C
BOULOU, M
MITONNEAU, A
BOIS, D
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 821 - 823
[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[10] LANG DV, 1979, TOP APPL PHYS, V37, pCH3