DEEP-LEVEL SPECTROSCOPY IN HIGH-RESISTIVITY MATERIALS

被引：236

作者：

HURTES, C

BOULOU, M

MITONNEAU, A

BOIS, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 12期

关键词：

D O I：

10.1063/1.89929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：821 / 823

页数：3

共 9 条

[1]

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[2]

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MITONNEAU, A ;

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ELECTRONICS LETTERS, 1977, 13 (07) :191-193

[6] HOLE TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].

MITONNEAU, A ;

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ELECTRONICS LETTERS, 1977, 13 (22) :666-668

[7]

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[8] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

SAH, CT ;

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TASCH, AF .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :759-+

[9] DETERMINATION OF DEEP LEVELS IN CU-DOPED GAP USING TRANSIENT-CURRENT SPECTROSCOPY [J].

WESSELS, BW .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1131-1133

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