EPITAXIAL THIN-FILMS OF PBTIO3/SNO2 HETEROSTRUCTURES ON SAPPHIRE

被引：5

作者：

CHANG, HLM

ZHANG, H

SHEN, Z

WANG, Q

机构：

[1] Materials Science Division, Argonne National Laboratory, Argonne

来源：

JOURNAL OF MATERIALS RESEARCH | 1994年 / 9卷 / 12期

基金：

美国能源部;

关键词：

D O I：

10.1557/JMR.1994.3108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial films of single-layer SnO2 and PbTiO3/SnO2 heterostructures were obtained on (0001) sapphire (alpha - Al2O3) substrates by metal-organic chemical vapor deposition. X-ray diffraction and transmission electron microscopy were used to characterize the structural properties of these films. The epitaxial relationship for the heterostructure PbTiO3/SnO2/sapphire was found to be (111) [011BAR]PbTiO3 parallel-to (100) [001]SnO2 parallel-to (0001) [11BAR00]alpha - Al2O3. The fact that epitaxial ferroelectric films were obtainable in such a structurally highly heterogeneous system suggests that a wide range of material selection is possible in exploring the kind of applications that need to utilize epitaxial ferroelectric films in a multilayered heterostructure.

引用

页码：3108 / 3112

页数：5

共 13 条

[11] FATIGUE AND RETENTION IN FERROELECTRIC Y-BA-CU-O/PB-ZR-TI-O/Y-BA-CU-O HETEROSTRUCTURES [J].