EFFECTS OF CRYSTAL SURFACE AND IMPERFECTIONS ON CHANNELING PHENOMENA OF PROTONS

被引：15

作者：

FUJIMOTO, F

KOMAKI, K

NAKAYAMA, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1971年 / 5卷 / 03期

关键词：

D O I：

10.1002/pssa.2210050328

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：725 / &

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共 14 条

[1] INTERPRETATION OF CHANNELLED-ION BEAM MEASUREMENTS FOR FOREIGN ATOM LOCATION IN CRYSTALS
ALEXANDER, RB
DEARNALEY, G
MORGAN, DV
POATE, JM
[J]. PHYSICS LETTERS A, 1970, A 32 (05) : 365 - +
[2] CHANNELING EFFECTS IN ENERGY LOSS OF 3-11-MEV PROTONS IN SILICON AND GERMANIUM SINGLE CRYSTALS
APPLETON, BR
ERGINSOY, C
GIBSON, WM
[J]. PHYSICAL REVIEW, 1967, 161 (02): : 330 - &
[3] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING
BOGH, E
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &
[4] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING
DAVIES, JA
DENHARTO.J
ERIKSSON, L
MAYER, JW
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &
[5] CHANNELING OF MEV PROJECTILES IN TUNGSTEN AND SILICON
DAVIES, JA
DENHARTOG, J
WHITTON, JL
[J]. PHYSICAL REVIEW, 1968, 165 (02): : 345 - +
[6] ELLEGAARD C, 1967, MAT FYS MEDD DAN VID, V35
[7] DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS
FELDMAN, LC
RODGERS, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3776 - &
[8] Fujimoto F., 1970, Physics Letters A, V33, P432, DOI 10.1016/0375-9601(70)90591-8
[9] Lindhard J, 1965, K DAN VIDENSK SELSK, V34
[10] CHANNELING OF 1.5 MEV PROTONS IN ALKALI HALIDE CRYSTALS
MANNAMI, M
SAKURAI, T
OZAWA, K
FUJIMOTO, F
KOMAKI, K
[J]. PHYSICA STATUS SOLIDI, 1970, 38 (01): : K1 - &