ELECTRICAL MODELING OF OHMIC CONTACTS FORMATION ON METAL-N-GAAS SYSTEMS

被引:4
作者
MOJZES, I
机构
来源
ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE | 1980年 / 48卷 / 2-3期
关键词
D O I
10.1007/BF03157366
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
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页码:131 / 146
页数:16
相关论文
共 30 条
[1]  
AKITA K, JAP J APPL PHYS, V10, P392
[2]  
ARMANTROUT GA, 1968, SOLID STATE TECHNOL, V11, P29
[3]  
BARUBIN AA, 1974, P S GENERATION MICRO, P457
[4]  
BLOOD P, 1972, ACTA ELECTRONICS, V15, P33
[5]   THERMAL EFFECTS OF OPERATION OF HIGH AVERAGE POWER GUNN DEVICES [J].
BRAVMAN, JS ;
EASTMAN, LF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) :744-&
[6]   OHMIC CONTACTS FOR GAAS DEVICES [J].
COX, RH ;
STRACK, H .
SOLID-STATE ELECTRONICS, 1967, 10 (12) :1213-+
[7]   PULSE METHOD FOR MEASUREMENT OF CONTACT RESISTANCE AND BULK RESISTANCE OF SEMICONDUCTORS SAMPLES [J].
DHAR, S ;
NAG, BR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :508-510
[8]  
GOLDBERG YA, 1969, FIZ TEKH POLUPROV, V3, P1718
[9]  
GURNEY WSC, 1971, EL LETT, P711
[10]   DETERMINATION OF SEMICONDUCTOR-METAL CONTACT RESISTANCE BY AN ANGLE-DEPENDENT GEOMETRICAL MAGNETORESISTANCE METHOD [J].
GUTAI, L ;
MOJZES, I .
APPLIED PHYSICS LETTERS, 1975, 26 (06) :325-326