THERMAL EFFECTS OF OPERATION OF HIGH AVERAGE POWER GUNN DEVICES

被引：6

作者：

BRAVMAN, JS

EASTMAN, LF

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1970.17067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：744 / &

共 7 条

[1] CURRENT FILAMENTS IN SEMICONDUCTORS [J].

BARNETT, AM .

[2]

CAMP WO, PRIVATE COMMUNICATIO

[3]

CONWELL EM, 1967, HIGH FIELD TRANSPORT, P197

[4]

HEEKS JS, 1967, IEEE T ELECTRON DEVI, VED14, P512

JERVIS, TR ;

JOHNSON, EF .

[6]

KENNEDY WK, 1967, 1 P BIENN C ENG APPL

[7] HEAT FLOW IN N++-N-N+ EPITAXIAL GAAS BULK EFFECT DEVICES [J].

KNIGHT, S .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01) :112-&