PREPARATION OF PBTIO3 THIN-FILMS BY REACTIVE IONIZED CLUSTER BEAM DEPOSITION

PbTiO3 thin films were prepared by reactive ionized cluster beam (R-ICB) deposition on highly (100)-oriented Pt films formed on SiO2/Si substrates. PbTiO3 thin films consisting of c-axis- and a-axis-oriented crystallines with perovskite structure were obtained at a comparatively low substrate temperature of 430-degrees-C. We think tensile stress exists in PbTiO3 thin films, and it may be the cause of a-axis orientation. It is considered that fabricating high-density PbTiO3 thin films by applying an acceleration voltage decreases the tensile stress in the film and is advantageous for preparation of c-axis-oriented PbTiO3 thin films.